A new n-channel MOSFET in a slim 8×8 mm package sets a benchmark with just 0.88 mΩ RDS(on), 0.36 °C/W thermal resistance, and enhanced solderability — ideal for high-efficiency, space-constrained industrial designs.
Vishay Intertechnology has launched a new 80 V n-channel power MOSFET — the SiEH4800EW — designed to deliver best-in-class performance in demanding industrial applications. This latest addition to Vishay’s TrenchFET Gen IV family is housed in the compact PowerPAK 8x8SW bond wireless (BWL) package and stands out with an exceptionally low typical on-resistance (RDS(on)) of just 0.88 mΩ at 10 V. This represents a 15% reduction in RDS(on) compared to competing devices in the same footprint, leading to significantly lower conduction losses and improved power efficiency.
The key features include:
- Low thermal resistance: RthJC of just 0.36 °C/W — 18% lower than comparable MOSFETs
- Compact size: 8 mm x 8 mm footprint saves 50% PCB space vs. TO-263 packages
- Ultra-thin profile: Only 1 mm thick, ideal for space-constrained designs
These attributes make it ideal for space-constrained applications requiring high efficiency and thermal performance. To support enhanced solderability and thermal design, the MOSFET features a fused lead structure that expands the source PAD solderable area to 3.35 mm² — four times that of conventional PIN-style designs. This lowers current density between the MOSFET and PCB, mitigating electro-migration and improving long-term reliability. Additionally, its wettable flanks ensure reliable solder joints and simplify visual inspection during manufacturing.
The SiEH4800EW is tailored for applications such as motor drives, power tools, welding machines, battery management systems, robotics, plasma cutters, and 3D printers. With a high current capability of up to 608 A and operating temperatures up to +175 °C, it delivers outstanding performance even under harsh conditions. Its BWL architecture further minimizes parasitic inductance, enhancing overall system efficiency.
Fully RoHS-compliant and halogen-free, the SiEH4800EW is also 100% Rg and UIS tested to ensure reliability. Samples and production quantities are now available with a standard lead time of 13 weeks, making this device an immediate solution for engineers seeking compact, efficient, and robust power switching.
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