Infineon’s CoolGaN 650-V G5 bidirectional switch (BDS) integrates two switches in a single device to actively block current and voltage in both directions. Its monolithic common-drain design with a double-gate structure, based on gate injection transistor technology, improves efficiency, reduces die size, and replaces conventional back-to-back configurations.
The GaN switch simplifies cycloconverter designs by enabling single-stage power conversion, eliminating the need for multiple conversion stages. In microinverters, it supports higher power density and a lower component count. It also enables advanced grid functions such as reactive power compensation and two-way power flow.
The CoolGaN 650-V G5 BDS is offered in a TOLT package with RDS(on) values of 110 mΩ and 55 mΩ. It is now open for ordering, with samples of the 110-mΩ version available.
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