spot_img
HomeTechElectronic TechnologySiC MOSFETs reinforce system longevity

SiC MOSFETs reinforce system longevity

SiC MOSFETs reinforce system longevity

Navitas Semiconductor’s latest GeneSiC MOSFETs exceed AEC-Q101 standards, extending lifetime in automotive and industrial systems. Based on trench-assisted planar technology, they are available in HV-T2Pak top-side cooled packages with 6.45-mm creepage and a CTI above 600 V, supporting IEC-compliant operation up to 1200 V.

Navitas uses the term AEC-Plus to designate parts that exceed the AEC-Q101 reliability tests published by the Automotive Electronics Council (AEC), based on multi-lot stress-test results. This in-house benchmark layers additional stress conditions onto standard AEC-Q101 and JEDEC protocols to better mirror real-world automotive and industrial mission profiles by:

  • Incorporating dynamic reverse bias (D-HTRB) and dynamic gate switching (D-HTGB) tests
  • Running power- and temperature-cycling for over twice the standard duration
  • Extending static high-temperature, high-voltage tests (HTRB, HTGB) to over three times the AEC-Q101 interval
  • Qualifying parts to 200 °C TJMAX for improved overload capability

Housed in the 14×18.5-mm HV-T2Pak, the initial portfolio includes 1200-V devices with on-resistance from 18 mΩ to 135 mΩ and 650-V devices ranging from 20 mΩ to 55 mΩ. Lower on-resistance (<15 mΩ) SiC MOSFETs in the same package will follow later in 2025. For more information on GeneSiC MOSFETs, click here.

Navitas Semiconductor 

The post SiC MOSFETs reinforce system longevity appeared first on EDN.

Source link

- Advertisement -

spot_img
spot_img

Get Everyday Worldwide Technology News, Tips & Tricks

spot_img
spot_img

- Advertisement -