Toshiba has released four 650-V third-generation SiC MOSFETs in compact 8×8-mm DFN packages. The surface-mount DFN reduces volume by over 90% compared to leaded packages such as TO-247 (3-terminal) and TO-247-4L(X) (4-terminal). It also enables smaller parasitic impedance components, helping to lower switching losses.
The package’s flat, leadless design enables a Kelvin connection for the gate-drive signal-source terminal, minimizing source wire inductance. This improves switching speed and efficiency. For example, the TW054V65C achieves about 55% lower turn-on loss and 25% lower turn-off loss compared to Toshiba’s existing products.
Well-suited for industrial applications, the devices can be used for switch-mode power supplies, EV charging stations, and photovoltaic inverters. Key specifications include:
Toshiba has begun volume shipments of the TW031V65C, TW054V65C, TW092V65C, and TW123V65C 650-V SiC MOSFETs in the 8×8-mm DFN package.
Toshiba Electronic Devices & Storage
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